发明名称 CYLINDRICAL STORAGE CAPACITOR OF A MEMORY CELL AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: A cylindrical storage capacitor of a memory cell is provided to prevent a micro bridge between adjacent storage capacitors. CONSTITUTION: The cylindrical storage capacitor comprises: an insulating layer(15) formed on an upper plane of a semiconductor substrate; a conductive plug in a contact hole(32) vertically passing through a predetermined region of the insulating layer so as to be connected electrically to a diffusion region; a poly-crystal silicon layer(21) for a storage electrode formed in a cylindrical structure on the insulating layer so as to be connected electrically to the conductive plug(19), wherein a hemi-spherical grain silicon(23) is formed on inside and upper planes of the cylindrical structure; a dielectric layer(25) deposited on inside, upper and outside planes of the poly-crystal silicon layer(21); and a pattern of a poly-crystal silicon layer(27) for a plate electrode formed on the dielectric layer.
申请公布号 KR20000005623(A) 申请公布日期 2000.01.25
申请号 KR19990012577 申请日期 1999.04.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SE HYUNG
分类号 H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/04
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