发明名称 |
CYLINDRICAL STORAGE CAPACITOR OF A MEMORY CELL AND METHOD FOR FABRICATING THE SAME |
摘要 |
PURPOSE: A cylindrical storage capacitor of a memory cell is provided to prevent a micro bridge between adjacent storage capacitors. CONSTITUTION: The cylindrical storage capacitor comprises: an insulating layer(15) formed on an upper plane of a semiconductor substrate; a conductive plug in a contact hole(32) vertically passing through a predetermined region of the insulating layer so as to be connected electrically to a diffusion region; a poly-crystal silicon layer(21) for a storage electrode formed in a cylindrical structure on the insulating layer so as to be connected electrically to the conductive plug(19), wherein a hemi-spherical grain silicon(23) is formed on inside and upper planes of the cylindrical structure; a dielectric layer(25) deposited on inside, upper and outside planes of the poly-crystal silicon layer(21); and a pattern of a poly-crystal silicon layer(27) for a plate electrode formed on the dielectric layer.
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申请公布号 |
KR20000005623(A) |
申请公布日期 |
2000.01.25 |
申请号 |
KR19990012577 |
申请日期 |
1999.04.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SE HYUNG |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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