METHOD FOR FORMING A JUNCTION OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A junction formation method is provided to prevent a vertical diffusion and a lateral diffusion of impurity ions, easily form a shallow junction depth and achieve an effective channel length by using an ion diffusion barrier layer. CONSTITUTION: The method comprises the steps of: forming a gate electrode(23) on a silicon substrate(21); first implanting an ion diffusion barrier ions into the resultant structure; second implanting impurity ions on the entire surface of the resultant structure; and simultaneously forming an ion diffusion barrier layer(100) and a junction(24), wherein the junction(24) is formed on the ion diffusion barrier layer(100) and in the silicon substrate(21). The ion diffusion barrier ions is a member selected from the group consisting of O2, N2, and H2.