发明名称 THIN CONDUCTIVE FILM AND MAGNETIC RESISTANCE EFFECT ELEMENT USING THE THIN CONDUCTIVE FILM AND METHOD FOR MAKING THE THIN CONDUCTIVE FILM
摘要 PURPOSE: A method for making a thin conductive film applies a compressive stress about a conductive layer when forming a conductive layer, and prevents a film separation of the conductive layer. CONSTITUTION: When forming a conductive layer of a magnetic resistance effect element in a DC magnetron sputtering device, a tension stress is applied on the conductive layer. Therefore, a prior method easily occurs a film separation of the conductive layer. A lattice plane spacing of a vertical direction of the conductive layer(23) is larger than that of a bulk material. Thereby, a compressive stress is applied on the conductive layer, thereby preventing a film separation.
申请公布号 KR20000006501(A) 申请公布日期 2000.01.25
申请号 KR19990024433 申请日期 1999.06.26
申请人 ALPS ELECTRIC CO., LTD. 发明人 GANNO HIROYUKI
分类号 C23C14/38;C23C14/14;G01R33/09;G11B5/39;G11B5/40;H01F10/30;H01F10/32;H01F41/30;H01L21/28;H01L21/285;H01L43/08;H01L43/12;(IPC1-7):G11B5/39 主分类号 C23C14/38
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