发明名称 ALUMINUM COMPLEX DERIVATIVE FOR CHEMICAL VAPOR DEPOSITION AND PRODUCTION OF THE SAME DERIVATIVE
摘要 PROBLEM TO BE SOLVED: To obtain a new organometallic compound excellent in thermostability and useful for chemical vapor deposition, etc. SOLUTION: The new organometallic compound is expressed by the formula: H3Al:Ln [L is at least one of Lewis bases capable of giving Al lone pair, which are thiophenes, thiopyrans, or expressed by formula I or II (R is a 1-4C alkyl; R', R'', R35 to R38 are each H or a 1-2C alkyl; X is O or an alkyl-containing nitrogen); (n) is 1 or 2], e.g. 1-methylpyrrolidine alum. The compound of the formula: H3Al:Ln is obtained by forming a soil suspension of aluminum chloride and lithium aluminum hydride in hexane and then by adding a Lewis base such as 1-methylpyrrolidine to the suspension.
申请公布号 JP2000026474(A) 申请公布日期 2000.01.25
申请号 JP19990116567 申请日期 1999.04.23
申请人 ROHM & HAAS CO 发明人 SHIN HYUN-KOOCK;SHIN HYUN-YOO
分类号 H01L23/52;C07F5/06;C23C16/20;H01L21/3205;(IPC1-7):C07F5/06;H01L21/285;H01L21/320 主分类号 H01L23/52
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