发明名称 TWO-STEP PROJECTING BUMP FOR SEMICONDUCTOR CHIP AND METHOD FOR FORMING THE SAME
摘要 PURPOSE: Disclosed is a two-step projecting bump which is formed on an electrode of a semiconductor chip by melting the end of a metallic wire passed through a capillary to form a metallic ball. CONSTITUTION: The two-step projecting bump which is formed on an electrode (4) of a semiconductor chip (8) by melting the end of a metallic wire (1) passed through a capillary (3) to form a metallic ball (2), bonding the ball (2) to the electrode (4), laterally moving and then lowering the capillary (3), welding the wire (1) to the top of the ball (2) bonded to the electrode (4), and tearing off the wire (1). A section (B) in which large crystal grains are grown by the thermal effect of the heat applied to the wire (1) at the time of melting the wire (1) and forming the ball (2) is formed in the joining section of the wire (1) with the ball (2) immediately above the ball (2).
申请公布号 KR20000005317(A) 申请公布日期 2000.01.25
申请号 KR19987008031 申请日期 1998.10.09
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 TSUKAHARA, NORIHITO
分类号 H01L21/321;H01L21/60;H01L23/485;(IPC1-7):H01L21/321 主分类号 H01L21/321
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