METHOD FOR FORMING SHALLOWER JUNCTIONS OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method is provided to improve a thermal stability using a silicide film as a diffusion source. CONSTITUTION: The method comprises the steps of: forming a refractory silicide film having at least two metals and silicon on a semiconductor substrate(10) to form junction portions, implanting a dopant into the refractory silicide film, forming shallower junction portions beneath the refractory silicide film by heat-diffusing the implanted dopant beneath the silicide film. Thereby, it is possible to improve a thermal stability using a silicide film as the diffusion source capable of withstanding high temperature for forming the shallower junction portions.