发明名称 APPARATUS FOR GROWING THIN FILM AND THIN-FILM GROWING METHOD USING APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To quickly handle wafers different in aperture, and if required, a plurality of wafers at the same time, by using one thin film growing apparatus having a single-wafer processing susceptor. SOLUTION: A wafer is mounted on a single-wafer processing susceptor 1 not directly but via a removable intermediate plate 53, a robot handler 6 carriers the intermediate plate 53 into/from a reactor R, the intermediate plate 53 is an SiC disc having a counter bore 53b which houses a large-aperture wafer W1 inside and is housed in a counter bore 2 of the susceptor 1, and a plurality of wafers can be housed on one intermediate plate, if they are small- aperture wafers. Since there is no need to replace the susceptor 1 itself, it can be done, without opening the reactor R to the opening air and required time can be saved for the atmosphere adjustment in the reactor or optimizing the reacting condition.</p>
申请公布号 JP2000021788(A) 申请公布日期 2000.01.21
申请号 JP19980196767 申请日期 1998.06.26
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 HOSHINA SUKEAKI
分类号 C30B25/12;C23C16/24;C23C16/44;C23C16/458;H01L21/205;H01L21/68;H01L21/683;(IPC1-7):H01L21/205 主分类号 C30B25/12
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