| 摘要 |
PROBLEM TO BE SOLVED: To avoid excessively polishing a metal line which would increase the resistance of metal lines and the parasitic capacitance between conductor lines by forming a double waveform pattern, using shallow dummy metal lines. SOLUTION: A thin adhesive layer 328 is formed in shallow metal line trenches and on the surface of an inter-metal dielectric layer 317 along the side walls and bottoms of second metal line trenches, vias, and third metal line trenches, a metal layer and adhesive layer 328 located higher than the inter-metal dielectric layer 317 are polished by the chemical-mechanical polishing to result in that metal layer filled in the second metal line trenches, third metal line trenches 326 and shallow dummy metal line trenches have the same height as the inter-metal dielectric layer 317, thereby avoiding excessively polishing the metal lines which would increase the resistance and hence the operation speed of the device not becomes low because of a small parasitic capacitance.
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