METHOD OF FORMING SINGLE SILICON LAYER, MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To uniformly epitaxially grow an Si layer at low temps. by epitaxially growing a polysilicon or amorphous Si layer or Si of a low-m.t. metal layer with seeds of a substance layer by the cooling treatment to precipitate a single crystal Si layer. SOLUTION: On one main surface of a quartz glass substrate 1 a sapphire thin film 50 is formed on which a polysilicon film 5 is then deposited by the low pressure CVD or plasma CVD method, a metal In film 6 is formed on the polysilicon film 5 by the sputtering or vacuum evaporation, and the substrate 1 is held at high temps. in an H atmosphere to dissolve the polysilicon 5 in a melt of the metal In 6 and gradually cooled to epitaxially grow the Si dissolved in the metal In with the sapphire thin film 50 used as seeds, thus precipitating e.g. a single crystal Si layer 7 of about 0.1μm thick.