| 摘要 |
PROBLEM TO BE SOLVED: To improve the element characteristics of a thin film bipolar transistor, using a thin polysilicon layer as an active layer. SOLUTION: First and second spacer layers 31 and 32 are used as a part of a mask at forming within a p-type base layer 24 by ion implantation, so that the p-type base layer 24 can be formed with higher precision through self- alignment. Also, of a p-n junction formed of the p-type base layer 24 and an n-type emitter layer 25 in a contact region equipped with a base electrode is removed so that ineffective currents, without contribution to a bipolar transistor operation can be prevented from running between the emitter and base.
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