| 摘要 |
PROBLEM TO BE SOLVED: To improve the surface flatness of a substrate by preventing much as possible the protrusion of the top of a filler filling up an element separating groove from the surface of the substrate as. SOLUTION: A method of manufacturing semiconductor device includes a step of depositing first and second layers 16 and 17 on the main surface of a semiconductor substrate, a step of forming openings 18 in which specific portions of the main surface of the semiconductor substrate are exposed through the first and second layers 16 and 17, and a step of forming grooves 19 by etching the semiconductor substrate via the openings 18 by using the second layer 17 as a mask. The method also includes a step of forming insulating coating films 15a on the internal surfaces of the grooves 19, a step of filling the grooves 19 with a filler 20 via the openings 18, and a step of oxidizing the filler 20 so that the lowest surface of the oxidized portion 21 of the filler 20 becomes slightly higher than the upper surface of the first layer 16. Moreover, the method also includes one more step of removing the oxidized portion 21 of the filler 20 and second layer 17.
|
