| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having a redundant circuit type for selecting redundant cell arrays without adding a complicated circuit without increasing an area of a wiring region. SOLUTION: Addresses are allocated in redundant cell arrays 21 to 2m for fault remedy of a memory cell array 1. A first internal address AIN input by an address input circuit 5 is selected by a switching circuit 7 in the case of no defective address, transferred to an address decoder 3, and the array 1 is accessed. The address AIN is sent to an address converters 61 to 6m. In the case of the defective address, a second internal address BIN converted into addresses of the arrays 21 to 2m together with an identification signal S is generated. The address BIN is selected by the circuit 7, transferred to the decoder 3, and the arrays 21 to 2m are selectively driven. |
