发明名称 SETTING METHOD FOR SEMICONDUCTOR MANUFACTURING CONDITIONS, DEVICE FOR SETTING THE SEMICONDUCTOR MANUFACTURING CONDITIONS, SEMICONDUCTOR MANUFACTURING EQUIPMENT USING THE DEVICE AND SEMICONDUCTOR SUBSTRATE MANUFACTURED BY THE SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a setting method for semiconductor manufacturing conditions, a device, semiconductor manufacturing equipment by which plasma process of a semiconductor can be performed under stable conditions, and a semiconductor substrate. SOLUTION: This method comprises an exciting light generating means 5, spectrum means 28 by which fluorescence from the particles in plasma is spectrally separated, light detecting means 30 for converting fluorescent light intensity into an electrical signal, fluorescent light intensity calculating means 35 for calculating fluorescent intensity, based on the electrical signal, corresponding wavelength selecting means 35 for selecting more than two corresponding wavelengths, normal fluorescent light data producing means 35 for producing normal fluorescent data which is the relation between parameters and respective corresponding wavelength, deciding means 35 for deciding permissible range of fluorescence by which the permissible range of the fluorescence, calculating means 35 for the fluorescent light intensity during process, by which the fluorescent intensity during a substrate 7 is processed, and candidate selecting means 35 for selecting candidate parameters corresponding to the fluorescent light intensity during the process.
申请公布号 JP2000021856(A) 申请公布日期 2000.01.21
申请号 JP19980184653 申请日期 1998.06.30
申请人 HAMAMATSU PHOTONICS KK 发明人 YOSHIDA HARUMASA
分类号 H01L21/302;H01L21/203;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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