摘要 |
<p>PROBLEM TO BE SOLVED: To prevent any unwanted etching in a partial etching process by easily and quickly searching a reference mark for positioning. SOLUTION: An opening mark 9 for positioning and an observation hole 10 larger than the opening mark 9 are formed on a photomask 7, and a reference mark 4 for positioning and an etching stop layer 3 which is larger than the observation hole 10 are formed on a semiconductor substrate 1. Then, the reference mask 4 is searched through the observation hole 10, and the positioning of the reference mark 4 and the opening mark 9 is conducted, and the observation hole 10 is made facing an etching stop layer 3. At operating the partial etching of an etching layer 5 to be etched using the photomask 7, the etching of a part corresponding to the observation hole 10 is prevented by the etching stop layer 3.</p> |