| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method, by which a semiconductor device that can prevent the occurrence of short circuits in wiring and can improve the yield, can be manufactured. SOLUTION: After a connecting hole 4 is formed through an interlayer insulating film 2 formed on a semiconductor substrate 1, a connecting hole plug 6 is formed by forming a conductive film on the insulating film 2, in such a way that the hole 4 can be filled with the conductive film and removing the conductive film except for the part of the film in the hole 4. Then an insulating film 7, having a thickness that can sufficiently cover residues 5a, is formed on the interlayer insulating film 2, and another connecting hole 8 is formed by removing the insulating film 7 from the top of the connecting hole 4. Thereafter, an Al wiring layer is formed in such a way that the wiring layer can be connected to the plug 6 through the connecting hole 8, and wires 9a-9c are formed by patterning the wiring layer.
|
