| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of an image-pickup element by reducing the thicknesses of polysilicon electrodes and increasing the degree of integration and number of pixels in the element, and in addition, to reduce the power consumption of the element by reducing the parasitic capacitances between the polysilicon electrodes and a light shielding film without deteriorating the smear characteristic of the element. SOLUTION: In a solid-state image-pickup element, a thick passivation film (which is used as a mask at implanting of ions of an impurity for forming photosensors) 18, having the same shape and same size as each polysilicon electrode (vertical transfer electrode) 7 has, is formed on the upper surface of each electrode 7 and an insulating protective film 19 having a film thickness smaller than that of the passivation film 18 is provided on the side faces of each electrode 7 and the upper surface of photosensor 3 and 4. The electrode 7 is coated with a light shielding film 9 via the passivation film 18 and protective film 19.
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