| 摘要 |
PROBLEM TO BE SOLVED: To reduce a reflection factor and at the same time prevent film quality from deteriorating extremely, by allowing the number of bottom parts where the angle of the bottom part in the sectional shape of a transparent substrate is equal to or more than a specific value to occupy a specific ratio of an entire substrate. SOLUTION: A transparent conductive film 22 where SnO2 is a main material is formed to be as thick as 800 nm at a substrate temperature of 450 deg.C or higher on a glass substrate 21 by the thermal CVDc method with SnCl4 as a main material, and the surface of the formed transparent conductive film 22 is formed at the top part and a bottom part 23 of recessed and projecting parts, thus obtaining a transparent electrode substrate where the elevation difference between the top part and the bottom part 23 of the recessed and projecting parts is 200 nm. Then, the substrate is installed in a vacuum device, ionization is made by an ion source using an Ar ion, 100 eV kinetic energy is given, and the Ar ion where the kinetic energy is given is applied to a surface where the transparent electrode of the substrate 21 is deposited for 30 minutes, thus allowing the number of bottom parts where the angle of the bottom part 23 is equal to or more than 90 degrees to occupy 50% or higher than the entire substrate 21. |
