| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal thin wire structure, whose wiring width is small in accordance with a new principle by preventing the width of metal wiring from being limited by the resolution of a semiconductor lithography. SOLUTION: At connecting circuit elements A and B, a local distortion is formed on the surface of a semiconductor substrate S or a semiconductor material layer formed on the substrate S, and then a metallic element, such as bismuth, is deposited on the surface. Thus, a metallic element thin wire L positioned by this distortion is formed as a wiring between the circuit elements A and B. Then, this distortion can be formed, based on the structure on the boundary face or end parts of the circuit elements A and B, or based on the defects formed on the surface of the semiconductor substrate or the semiconductor material layer.
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