| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof, wherein solder balls are effectively prevented from degrading in adhesion due to a thermal treatment carried out at a high temperature restraining the manufacturing cost of the semiconductor device from increasing in manufacturing cost. SOLUTION: A semiconductor device is equipped with a spherical terminal 18, wherein the terminal 18 is fixed to a land 26 located on a wiring layer 16 to serve as an outer terminal provided in the rear of a package board 22 or a terminal as an inner connector between a semiconductor chip and the package board 22. The land 26 is equipped with a nickel layer 28 on the wiring layer 16 and a gold layer 32 which comes into contact with the terminal 18, and a diffusion stop layer 30 which is formed of Pd or Pd alloy to stop Ni from being diffused into the gold layer 32 is interposed between the layer 28 and 32. Ni is prevented from being diffused upward by the diffusion stop layer 30, whereby the surface of the land 26 is hardly oxidized, and the gold layer 32 can be made thin through a flash plating method, so that a rigid and fragile layer of Au-Sn alloy or the like is hardly formed on a solder joint surface. |
