| 摘要 |
The invention concerns heterostructure field effect transistors (HFET's) with high charge carrier concentration in the two-dimensional charge-carrier gas. The n-HFET of the heterostructure layer sequence contains several zones with formed 2DEG while the p-HFET contains several zones with formed 2DHG, which can be gate-controlled with a transistor gate, without mutually screening each other. At the same time, more charge carriers ns with high mobility are available through several channels. Higher transconductances for transistors are obtained with this, resulting in the promise of shorter switching times, especially for integrated circuits. In addition, other characteristics that are critical for the high-frequency technology, such as transit frequency and maximum operating frequency, can also be increased.
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