| 摘要 |
A method for forming micro patterns of a semiconductor device which is capable of forming, on a semiconductor substrate, accurate micro patterns having a dimension smaller than the resolution of a stepper as used. The method includes the steps of providing a semiconductor substrate, forming an low layer over the semiconductor substrate, forming a first photosensitive film over the low layer, selectively removing the first photosensitive film by use of a first light exposure mask, thereby forming a first photosensitive film pattern, forming an intermediate layer over the entire exposed upper surface of the resulting structure obtained after the formation of the first photosensitive film pattern, forming a second photosensitive film over the intermediate layer, selectively removing the second photosensitive film by use of a second light exposure mask, thereby forming a second photosensitive film pattern having pattern portions each being disposed between adjacent pattern portions of the first photosensitive film pattern, selectively removing the intermediate layer by use of the second photosensitive film pattern in such a manner that the first photosensitive film pattern is exposed; and selectively removing the low layer while using the first and second photosensitive film patterns are used as a mask, thereby forming an low layer pattern.
|
