发明名称 Manufacturing method of a semiconductor device
摘要 After a contact hole for an aluminum gate electrode is formed, a nickel film is formed by electroless plating, and coincidently, a natural oxide film formed on the gate electrode is removed by wet etching. This provides a reliable contact between the gate electrode and an external lead-out wiring line.
申请公布号 US6015724(A) 申请公布日期 2000.01.18
申请号 US19960743169 申请日期 1996.11.04
申请人 SEMICONDUCTOR ENERGY LABORATORY CO. 发明人 YAMAZAKI, SHUNPEI
分类号 H01L21/336;H01L29/45;H01L29/49;(IPC1-7):H01L21/00 主分类号 H01L21/336
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