| 摘要 |
A method of producing a semiconductor device having a bipolar transistor and a CMOS (Complementary Metal Oxide Semiconductor) transistor is disclosed. An epitaxial layer is formed on a semiconductor substrate having an n-type buried layer and a p-type buried layer thereinside. A field oxide film is formed on the epitaxial layer for delimiting active regions. An n-type and a p-type well region each is formed in a particular position. An insulation film playing the role of a gate oxide film at the same time is formed over the entire surface of the substrate. Subsequently, an emitter contact hole and a collector contact hole each extending to the epitaxial layer are formed at the same time. A polysilicon layer is formed over the entire surface of the substrate and then etched to form an emitter electrode and a gate electrode each having a preselected configuration. The resulting semiconductor device achieves a desirable current drive ability.
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