Semiconductor memory device and method of manufacturing the same

摘要

A semiconductor memory device comprises a matrix of memory cells, each having a transistor and a capacitor. A first electrode, a dielectric film and a second electrode are sequentially staked on a silicon monocrystalline substrate and epitaxially grown to form a capacitor having a multilayer structure. Then, an SOI layer is formed on the monocrystalline substrate carrying thereon the capacitor with an insulator film interposed therebetween. A source/drain diffusion layer is formed in the SOI layer and a gate electrode is formed to produce a MOS transistor. Either the source or the drain of the source/drain diffusion layer of the transistor is connected to the second electrode by way of the polysilicon layer in the contact hole running through the SOI layer and the insulator film layer.