MULTI LAYER PROTECTIVE FILM FORMING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A laminated protective film forming method of a semiconductor device is provided to prevent a void and gap created by the space existing between structures and improve the protective film characteristics and reliability of element. CONSTITUTION: The protective film is produced in the process of; filling in the space over the semiconductor element formed on the semiconductor substrate and over the metal wiring structure with a silicon oxide nitride film(22) and forming a base film forming a gap fill layer(18) in front of the above base film by evaporating a silicon oxide(22); forming an upper film in front of the above gap fill layer.