PLANER BURIED SEMICONDUCTOR LASER AND METHOD THEREOF

摘要

PURPOSE: A semiconductor laser and method thereof are provided to achieve a high performance optical output property by using a planer buried semiconductor laser structure. CONSTITUTION: The method comprises the steps of: defining an active region(302) using a mesa etching; regrowing current blocking layers(304,305,306) of p-n-p structure in order to inject currents into the active region; regrowing a p-InP cladding layer(306) and a p-InGaAs ohmic contact layer(307) on the active region(302); and regrowing a semi-insulating InP current blocking layer(309) in order to increase a modulation speed at both sides of the p-n-p current blocking layers.