发明名称 DRAM FOR FAST OPERATION
摘要 PURPOSE: The DRAM is for realizing fast operation by improving the read operation time in 4 bit and 8 bit page mode operation. CONSTITUTION: The DRAM comprises: a column decoder(25) which connects the corresponding bit line to a data bus line without change as to the input of a column address signal as long as page inputted later including a column address signal, being selected by address signal except the least significant n bit of the column address; a data bus line sense amp array(26) which senses, amplifies and latches data in the data bus line, with its operation being controlled by the least significant n bit signal of the column address signal; and a data output buffer(28) outputting by buffering the latched data.
申请公布号 KR20000003566(A) 申请公布日期 2000.01.15
申请号 KR19980024826 申请日期 1998.06.29
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 HEU, CHUN SIN
分类号 G11C11/409;H01L27/108;(IPC1-7):H01L27/108 主分类号 G11C11/409
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