METAL WIRING FORMING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal wiring forming method is provided to prevent a production of voids in the metal wiring by flattening a protruded key hole part through the chemical mechanical polishing process(CMP). CONSTITUTION: The metal wiring forming method for a semiconductor device comprises steps of; forming a contact hole to expose a semiconductor substrate penetrating the inter-layer insulation film(21); forming a conductive film for a plug on the top of overall structure, protruding the conductive film for the plug by removing part of the inter-layer insulation film; forming a polish pad layer, effecting CMP process and exposing inter-layer insulation film.