发明名称 |
METHOD FOR FORMING VIA CONTACT OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for forming a via contact of a semiconductor device is provided to prevent a void in the via contact from generation and to reduce a specific resistance of the via contact and a metal line for improving an electric source transferring speed. CONSTITUTION: A method for forming a via contact by reclaiming a metal into a via contact hole formed on a semiconductor substrate comprises: tilting the semiconductor substrate toward up and down for a certain angle; tilting the semiconductor substrate toward left and right for a certain angle; and evaporating and depositing the metal in the via contact hole.
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申请公布号 |
KR20000003427(A) |
申请公布日期 |
2000.01.15 |
申请号 |
KR19980024669 |
申请日期 |
1998.06.29 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD |
发明人 |
NOH, JAE SUN;KIM, JIN HYUN |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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