发明名称 METHOD FOR FORMING VIA CONTACT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for forming a via contact of a semiconductor device is provided to prevent a void in the via contact from generation and to reduce a specific resistance of the via contact and a metal line for improving an electric source transferring speed. CONSTITUTION: A method for forming a via contact by reclaiming a metal into a via contact hole formed on a semiconductor substrate comprises: tilting the semiconductor substrate toward up and down for a certain angle; tilting the semiconductor substrate toward left and right for a certain angle; and evaporating and depositing the metal in the via contact hole.
申请公布号 KR20000003427(A) 申请公布日期 2000.01.15
申请号 KR19980024669 申请日期 1998.06.29
申请人 HYUNDAI ELECTRONICS IND. CO., LTD 发明人 NOH, JAE SUN;KIM, JIN HYUN
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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