METHOD FOR MANUFACTURING CMOS TRANSISTORS

摘要

PURPOSE: A fabrication method of CMOS transistors is provided to improve a short channel effect of NMOS and PMOS transistors by forming the NMOS having thin LDD(lightly doped drain) structure and the PMOS having double punch stopping layer. CONSTITUTION: The method comprises the steps of forming a P-well region(303) and an N-well region(304) by ion-implanting after forming regions of an NMOS and a PMOS transistors is defined; forming a gate oxide(305) and a gate electrode(306) on a semiconductor substrate(301) and forming a lightly doped implanted region(307) by implanting N-type impurities; forming a spacer(308) at both sidewalls of the gate electrode and the gate oxide; forming a highly doped implanted region(310a) in the NMOS region and a highly doped implanted region(310b) in the PMOS region; and forming a punch stopping layer(312) in the lightly doped implanted region(310a) by implanting N-type impurities.