PRODUCTION METHOD OF THIN FILM TRANSISTOR

摘要

PURPOSE: A production method of a thin film transistor is provided to obtain a high movement of the thin film transistor. CONSTITUTION: The thin film transistor is produced in the process of; forming a gate electrode(12) and a gate insulation film(13) on the glass substrate(11); laminating a non-crystal silicon layer(14) and a fine crystal silicon layer(15) on the gate insulation film(13); forming a semiconductor layer made of a-Si layer and mu-Si layer on the part of the gate insulation film(13).