发明名称 GAS SUPPLYING APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES
摘要 PURPOSE: A gas supplying apparatus is provided to exactly control the pollution level of gas supplied to a process chamber by including a pollution sensing unit. CONSTITUTION: The process chamber(20) includes an MFC(mass flow controller)(24) and a valve(26) for controlling gas flow rate. The process chamber(20) further comprises a pollution sensing unit(28) formed on a line(22) for exactly sensing the gas pollution level supplied to the process chamber(20). Thereby, it is possible to improve a reliability of semiconductor devices by further comprising the pollution sensing unit(28).
申请公布号 KR20000001512(A) 申请公布日期 2000.01.15
申请号 KR19980021811 申请日期 1998.06.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DO HYUNG
分类号 H01L21/00;(IPC1-7):H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址