| 发明名称 |
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF |
| 摘要 |
PURPOSE: A semiconductor device production method is provided to improve the crystalline of a strong dielectric device and prevent deterioration of it and secure a sufficient sensing margin. CONSTITUTION: The semiconductor device is produced in the process of; forming a conductive layer on the activated area of a semiconductor substrate(100); forming the 1st insulation film on the semiconductor substrate; forming a capacitor by forming a strong dielectric film and an upper electrode of a capacitor on the 1st insulation film one after another; forming the 2nd insulation film on overall the semiconductor.
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| 申请公布号 |
KR20000002485(A) |
申请公布日期 |
2000.01.15 |
| 申请号 |
KR19980023272 |
申请日期 |
1998.06.20 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG, DONG JIN;KIM, KI NAM |
| 分类号 |
H01L21/8247;H01L21/02;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L27/115;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/8247 |
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