MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method for a semiconductor device is provided to decrease a parasitic capacitor of static electricity preventing circuit and to improve a static electricity discharging characteristic for improving a process yield rate and a reliability on a device movement. CONSTITUTION: A manufacturing method for a semiconductor device comprises: forming a gate oxide film on a p-typed semiconductor substrate(10); forming a gate electrode(16) on the gate oxide film; ion injecting a n-typed low density impurity to the semiconductor substrate of the both sides of the gate electrode; forming an insulating spacer(20) on a side wall of the gate electrode; ion injecting a phosphorus and a arsenic having high densities with different depths to the semiconductor substrate; and forming a source/drain area(26) by activating the impurities.