METHOD OF FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: The method is to prevent the air pore from generating on the surface of a ferroelectric thin film when forming the ferroelectric thin film with spin coating or LSMCD method using an organic solvent. CONSTITUTION: The method comprises the processes of: forming a SBT(SrBi2Ta2O9), a SBTN and a Bi4Ti3O12 having a bi-layered perovskeit structure by spin coating or LSMCD method with a metal organic matter solved in a solvent; removing the solvent by baking process; and performing a thermal annealing for crystallization after performing a rapid thermal annealing to boil out an organic matter combined in a composition element of the ferroelectric thin film.