POLYCRYSTALLINE SILICON LAYER ETCHING METHOD OF SEMICONDUCTOR APPARATUS USING SILICON NITRIDING FILM

摘要

PURPOSE: A polycrystalline silicon layer etching method is provided to effectively etch the polycrystalline silicon layer of a semiconductor apparatus. CONSTITUTION: The polycrystalline silicon layer etching method of the semiconductor manufacturing process comprises the steps of: forming a silicon nitride film(300) on a polycrystalline silicon layer(200); forming a photoresist pattern(400) on the silicon nitride film(300); forming a silicon nitride film pattern(310) by earthing the silicon nitride film(300); and etching the polycrystalline silicon layer(200) by using the photoresist pattern(400) and the silicon nitride layer pattern(310) as a mask.