| 摘要 |
PURPOSE: If a data stored in a flash memory is erased, a conventional fuse cell reading circuit can drive a latch circuit in a low voltage. but cannot drive the latch circuit in a high voltage, since voltage characteristics of the flash memory cell and the latch circuit are different each other. Therefore, it is required a novel fuse cell reading circuit being not affected by an external voltage, or an external temperature. CONSTITUTION: The present invention relates to a fuse cell reading circuit, which comprises a data fuse unit constructing an information of the fuse cell, a comparison unit comparing the information from the fuse unit with a reference value of a reference fuse unit, and latch unit storing the information from the fuse unit according to the compared result. The reference fuse unit and the data fuse unit are composed the same memory cells, so that the fuse cell reading circuit according to the present invention can read out the fuse cell data stably, by ensuring an operating margin regardless of external conditions
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