NONVOLATILE MEMORY DEVICES IMPROVED PROGRAMING AND ERASING EFFICIENCIES AND METHOD THEROF

摘要

PURPOSE: A nonvolatile memory devices and method thereof are provided to improve efficiencies of the programming and the erasing. CONSTITUTION: The nonvolatile memory comprises: a semiconductor substrate(100) divided by an active region and a device isolating region having a recess of slope surface at the surface of regions formed a source(150) and a drain(160) in the active regions; gate electrode patterns of memory cell formed on the semiconductor substrate located between adjacent recesses and sequentially laminated a gate insulating layer(110), a floating gate(120) and a control gate(140); and a source(150') and a drain(160') formed underneath the recess located between the gate electrode patterns, wherein the source and drain are overlapped with the floating gate through the slope surface of the recess.