| 摘要 |
PURPOSE: A NAND-type flash EEPROM(Electrically Erasable Programmable Read Only Memory) is provided to prevent a leakage current through a field transistor by applying a negative voltage to a word line. CONSTITUTION: The NAND-type EEPROM comprises memory cell arrays(MC1-MC16) arranged a matrix structure, a plurality of bit lines common connected to a drain of the memory cells, and a plurality of word lines connected to a control gate of the memory cells. The operating method of the EEPROM comprises the steps of: applying a negative voltage to a selective word line; applying a voltage more than 0V to a selective bit line; applying 0V to a non-selective bit line, a source line, a bulk selective line and a ground selective line; and applying a voltage more than 0V to a string selective line and a non-selective word line.
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