CAPACITOR OF A SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A capacitor and a method of forming the same are provided to improve a capacitance of the capacitor by increasing the size of hemi-spherical grains and to speed up an operation of a device by decreasing a surface resistance between a storage electrode and a lower structure thereof. CONSTITUTION: The method of forming a capacitor comprises the steps of: forming a contact hole(16) in a semiconductor substrate(10) on which a lower structure; forming a lower storage electrode(18a) having a first impurity concentration in the contact hole; forming an upper storage electrode(18) having a second impurity concentration on the lower storage electrode, the second impurity concentration less than the first impurity concentration; forming a hemi-spherical layer(20) on a surface of the upper storage electrode; forming a dielectric layer(22) on the hemi-spherical layer; and forming a plate electrode(24) on the dielectric layer.