发明名称 TRI-STATE SENSING CIRCUIT AND SIGNAL GENERATING CIRCUIT PROVIDED WITH IT
摘要 <p>PROBLEM TO BE SOLVED: To provide the tri-state sensing circuit that senses a tri-state and to provide the signal generating circuit that prevents an output signal from being brought into the tri-state. SOLUTION: This tri-state sensing circuit is provided with 1st and 2nd switching sections 31, 33 and a sensing signal generating section 35. The 1st switching section 31 generates a 1st response signal RES1 that is active in response to the output signal POUT over a 1st voltage. The 2nd switching section 33 generates a 2nd response signal RES2 that is activated in response to an output signal POUT over a 2nd voltage. The sensing signal generating section 35 generates a sensing signal PDICB that is activated the 1st and 2nd response signal RES1, RES2 when the voltage level of the output signal POUT is higher than the 1st voltage and lower than the 2nd voltage.</p>
申请公布号 JP2000013202(A) 申请公布日期 2000.01.14
申请号 JP19980336348 申请日期 1998.11.26
申请人 SAMSUNG ELECTRON CO LTD 发明人 KINSHO HIYUN;SO KIKAN
分类号 H03M1/12;H01L27/085;H03K5/08;H03K19/00;H03K19/003;(IPC1-7):H03K5/08 主分类号 H03M1/12
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