| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric storage device comprising a readout circuit of high reliability. SOLUTION: Parasitic capacitances CP11, CP12 are provided, and a sense amplifier SA11 is connected to one end of adjacent two bit lines BL11, BL12. A memory cell MC11 is composed of two ferroelectric capacitors FC111, FC112 and two cell transistors TC111, TC112. One terminal of each of the ferroelectric capacitors FC111, FC112 is connected to a plate line PL11, while the other terminal of the ferroelectric capacitor FC111 is connected to a source terminal of the cell transistor TC111 and the other terminal of the ferroelectric capacitor FC112 is connected to a source terminal of the cell transistor TC112. Furthermore, gates of enhancement-type NMOS transistors TR11, TR12, each having source and drain terminals which are short-circuited to be connected to a constant voltage source Vbias, are respectively connected to the bit lines BL11, BL12.
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