| 摘要 |
<p>PROBLEM TO BE SOLVED: To form an ohmic electrode having low resistance and high temperature stability on a silicon carbide substrate. SOLUTION: A nitrogen implanted resin 3 is formed in a region for forming the electrode of a silicon carbide substrate 1 and a nitride high melting point metal electrode 6 is formed on the upper surface in the region 3. A carbide high melting point metal electrode 9 is formed on the upper surface of the metal electrode 6 and the entirety is annealed to recover crystal defect at each part, activate the electric characteristics of impurities and to alloying the interfaces of the substrate 1 and the electrodes 6, 9. The carbide high melting point metal electrode 9 is used as ohmic electrode for connection with external wiring.</p> |
