| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can ensure a readout voltage margin, by a method wherein the temperature dependence of an internal voltage has the same tendency as the temperature dependence of a memory-cell threshold voltage. SOLUTION: A memory matrix which is composed of a plurality of memory cells, its peripheral circuit and the like constitute a 256-M flash memory whose memory cell current in a readout operation is at about 1 uA or lower. A temperature-dependence compensation circuit which compensates an internal voltage in the readout operation and which has a negative temperature dependence so as to correspond to the negative characteristic of the temperature dependence of a memory-cell threshold voltage is contained in an internal power- supply circuit in the peripheral circuit. In a temperature compensation circuit 22 in the temperature-dependence compensation circuit, the constant Wr* of right-side NMOS transistors TN8, TN10,..., TN22 is different from the constant Wleft of a left-side NMOS transistor TN6, a combination in which the constant Wr* is large with reference to the constant Wleft is trimmed, and the negative temperature dependence is obtained.</p> |
