发明名称 MAGNETO-RESISTANCE EFFECT SENSOR AND MAGNETIC RECORDING AND REPRODUCING DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain high recording density and to enable to prolong energizing life-time and to decrease noise due to heat with the element temp. suppressed low even if a large quantity of sense current flows by using an Al-N-O film high in heat conductivity and withstand voltage as an insulating layer of the upper part or the lower part of a magneto-resistance type head and making the distance between shields narrow. SOLUTION: The Al-N-O film is used as the insulating layer 13 and 17. The under part magnetic shield layer 12 is formed on a precisely ground non- magnetic substrate 11 at first and after the insulating layer 13 having a prescribed film thickness is formed, a magneto-resistance effect film 14 is formed. Next, after the magneto-resistance effect film 14 is patterned into a prescribed shape by the ion milling process, a magnetic domain control layer 15 and an electrode 16 are formed to suppress the Barkhausen noise. And further, the insulating layer 17 having a prescribed thickness and an upper shield layer 18 are formed. As a result, the element temp. is made lower when the same sense current flows to enable to prolong the energizing life-time and to improve the S/N ratio with the decrease of the thermal noise.
申请公布号 JP2000011332(A) 申请公布日期 2000.01.14
申请号 JP19980172542 申请日期 1998.06.19
申请人 HITACHI LTD 发明人 HOSHINO KATSUMI;KOMURO MATAHIRO;WATANABE KATSURO;FUYAMA MORIAKI
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
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