| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect semiconductor device wherein a threshold voltage varies little even if the thickness of metal constituting a gate electrode disperses, in a device of a constitution wherein metal constituting a gate electrode diffuses to a barrier layer. SOLUTION: In the semiconductor device, an n-type GaAs layer 3 and a barrier layer are formed on a GaAs board 1 one by one, a gate electrode 10 is formed on the barrier layer, and Pt constituting the gate electrode 10 diffuses to a barrier layer. The barrier layer is formed of a first AlGaAs layer 4 and a second AlGaAs layer 5, and the first AlGaAs layer 4 is a semiconductor material wherein Pt is hard to diffuse when compared to the second AlGaAs layer 5.
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