发明名称 THIN-FILM PHOTOELECTRIC CONVERSION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a thin-film photoelectric conversion device which is flexible in manufacturing process and kept high in long term reliability in outdoor use. SOLUTION: A thin-film photoelectric conversion device comprises a front transparent electrode layer 2, non-single crystal silicon photoelectric conversion layers 3 to 5, and a back metal electrode layer 7 which are successively laminated on a transparent board 1. Furthermore a back electrode protective layer 8 is laminated on the back metal electrode layer 7, wherein the protective layer 8 is formed of a metal, which produces a passivation film high in environmental resistance or an oxide which is high in environmental resistance.
申请公布号 JP2000012877(A) 申请公布日期 2000.01.14
申请号 JP19980169441 申请日期 1998.06.17
申请人 KANEGAFUCHI CHEM IND CO LTD 发明人 YAMAGISHI HIDEO
分类号 H01L31/04 主分类号 H01L31/04
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