| 摘要 |
PROBLEM TO BE SOLVED: To suppress electromigration(EM) known as a phenomenon of wire breaking caused by an actually flowing current to raise the reliability of the wiring with elevation of the integration degree of a device. SOLUTION: In a semiconductor device having a multilayer wiring involving a lower layer wiring and an upper layer wiring B connected through vias provided on a layer insulation film overlying the lower layer wiring, one or a plurality of dummy holes 10 are formed near actual vias 11 along a pattern of the upper layer wiring B at a depth not reaching the lower layer wiring A, and a part of the upper layer wiring B is buried in the holes 10 to form the upper layer wiring B.
|
