发明名称 METHOD FOR CHEMICAL ETCHING AND CHEMICAL ETCHING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To prevent breaking of a wafer to increase the yield when chemical etching is made only on a single side plane of a wafer, by using a mechanism of allowing one side plane of the wafer facing to a closed space while the other side plane facing to an open space. SOLUTION: The chemical etching equipment is provided with a mechanism of holding a tabular object 21 to be processed with its single side plane facing to a closed space 33 while the other side plane facing to an open space, and with an etching bath 11 in which chemical etching solution 12 is filled. By holding the object 21 in the mechanism and immersing the mechanism in the solution, only the other side plane is chemically etched. In this case, the equipment is provided with a pressure adjustment means 63 for adjusting the pressure inside the closed space, pressure detecting means 44 and 61 for detecting the pressure inside the closed space, and a pressure control means 62 which controls the pressure adjustment means 63 depending on the detected pressure to keep the pressure inside the closed space to a predetermined level.
申请公布号 JP2000012510(A) 申请公布日期 2000.01.14
申请号 JP19980176180 申请日期 1998.06.23
申请人 ADVANTEST CORP 发明人 MARUYAMA SHIGERU
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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