| 摘要 |
PROBLEM TO BE SOLVED: To enable formation of good groove wiring having a suppressed wiring resistance increase and its distribution, by preventing dishing caused by a difference in abrasion ratio between an underlying layer and a wiring main-material layer. SOLUTION: The wiring formation method includes a step of forming an underlying layer 14 on an inner wall of a groove 18 made as a recess in an interlayer insulating film 11 and on the film 11, and then forming a wiring main-material layer 15 in such a condition that the groove 13 is buried with the layer 15. In this example, the method includes steps of removing the underlying layer 14 on the interlayer insulating film 11 except for the layer 14 within the groove 13 after formation of the underlying layer 14 and prior to formation of the wiring layer 15, and removing by polishing the wiring layer 15 on the interlayer film 11 except for the layer 15 within the groove 13.
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